Charge trapping as the dominant degradation mechanism during plasma processing of 0.25 μm technology devices

International Symposium on IC Technology, Systems and Applications

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Bibliographic Details
Main Authors: Song, J., Chim, W.K., Chan, D.S.H., Pan, Y.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/72518
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-725182015-01-07T03:20:11Z Charge trapping as the dominant degradation mechanism during plasma processing of 0.25 μm technology devices Song, J. Chim, W.K. Chan, D.S.H. Pan, Y. ELECTRICAL ENGINEERING International Symposium on IC Technology, Systems and Applications 8 156-158 2014-06-19T05:08:57Z 2014-06-19T05:08:57Z 1999 Conference Paper Song, J.,Chim, W.K.,Chan, D.S.H.,Pan, Y. (1999). Charge trapping as the dominant degradation mechanism during plasma processing of 0.25 μm technology devices. International Symposium on IC Technology, Systems and Applications 8 : 156-158. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/72518 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description International Symposium on IC Technology, Systems and Applications
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Song, J.
Chim, W.K.
Chan, D.S.H.
Pan, Y.
format Conference or Workshop Item
author Song, J.
Chim, W.K.
Chan, D.S.H.
Pan, Y.
spellingShingle Song, J.
Chim, W.K.
Chan, D.S.H.
Pan, Y.
Charge trapping as the dominant degradation mechanism during plasma processing of 0.25 μm technology devices
author_sort Song, J.
title Charge trapping as the dominant degradation mechanism during plasma processing of 0.25 μm technology devices
title_short Charge trapping as the dominant degradation mechanism during plasma processing of 0.25 μm technology devices
title_full Charge trapping as the dominant degradation mechanism during plasma processing of 0.25 μm technology devices
title_fullStr Charge trapping as the dominant degradation mechanism during plasma processing of 0.25 μm technology devices
title_full_unstemmed Charge trapping as the dominant degradation mechanism during plasma processing of 0.25 μm technology devices
title_sort charge trapping as the dominant degradation mechanism during plasma processing of 0.25 μm technology devices
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/72518
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