Hot-carrier induced degradation mechanisms of 0.8μm LDD P-MOSFET with 850°C wet gate oxidation
Annual Proceedings - Reliability Physics (Symposium)
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Conference or Workshop Item |
| Published: |
2014
|
| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/72678 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | National University of Singapore |
| id |
sg-nus-scholar.10635-72678 |
|---|---|
| record_format |
dspace |
| spelling |
sg-nus-scholar.10635-726782015-02-03T22:08:19Z Hot-carrier induced degradation mechanisms of 0.8μm LDD P-MOSFET with 850°C wet gate oxidation Pan, Y. ELECTRICAL ENGINEERING Annual Proceedings - Reliability Physics (Symposium) 43-47 ARLPB 2014-06-19T05:10:46Z 2014-06-19T05:10:46Z 1993 Conference Paper Pan, Y. (1993). Hot-carrier induced degradation mechanisms of 0.8μm LDD P-MOSFET with 850°C wet gate oxidation. Annual Proceedings - Reliability Physics (Symposium) : 43-47. ScholarBank@NUS Repository. 0780307828 00999512 http://scholarbank.nus.edu.sg/handle/10635/72678 NOT_IN_WOS Scopus |
| institution |
National University of Singapore |
| building |
NUS Library |
| country |
Singapore |
| collection |
ScholarBank@NUS |
| description |
Annual Proceedings - Reliability Physics (Symposium) |
| author2 |
ELECTRICAL ENGINEERING |
| author_facet |
ELECTRICAL ENGINEERING Pan, Y. |
| format |
Conference or Workshop Item |
| author |
Pan, Y. |
| spellingShingle |
Pan, Y. Hot-carrier induced degradation mechanisms of 0.8μm LDD P-MOSFET with 850°C wet gate oxidation |
| author_sort |
Pan, Y. |
| title |
Hot-carrier induced degradation mechanisms of 0.8μm LDD P-MOSFET with 850°C wet gate oxidation |
| title_short |
Hot-carrier induced degradation mechanisms of 0.8μm LDD P-MOSFET with 850°C wet gate oxidation |
| title_full |
Hot-carrier induced degradation mechanisms of 0.8μm LDD P-MOSFET with 850°C wet gate oxidation |
| title_fullStr |
Hot-carrier induced degradation mechanisms of 0.8μm LDD P-MOSFET with 850°C wet gate oxidation |
| title_full_unstemmed |
Hot-carrier induced degradation mechanisms of 0.8μm LDD P-MOSFET with 850°C wet gate oxidation |
| title_sort |
hot-carrier induced degradation mechanisms of 0.8μm ldd p-mosfet with 850°c wet gate oxidation |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/72678 |
| _version_ |
1681087609385779200 |