The formation of In-rich regions at the perphery of the inverted hexahonal pits of InGaN thin-films grown by metalorganic vapor phase epitaxy

The formation of In-rich regions at the perphery of the inverted hexahonal pits of InGaN thin-films grown by metalorganic vapor phase epitaxy

MRS Internet Journal of Nitride Semiconductor Research

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Bibliographic Details
Main Authors: Li, P., Chua, S.J., Hao, M., Wang, W., Zhang, X., Sugahara, T., Sakai, S.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/72966
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/72966

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