The formation of In-rich regions at the perphery of the inverted hexahonal pits of InGaN thin-films grown by metalorganic vapor phase epitaxy

• Main Authors: Li, P., Chua, S.J., Hao, M., Wang, W., Zhang, X., Sugahara, T., Sakai, S.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/72966
• Institution: National University of Singapore

MRS Internet Journal of Nitride Semiconductor Research