Hot-carrier reliability of n- and p-channel MOSFETs with polysilicon and CVD tungsten-polycide gate

• Main Authors: Lou, C.L., Chim, W.K., Chan, D.S.H., Pan, Y.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/80546
• Institution: National University of Singapore

Microelectronics Reliability