Hot-carrier reliability of non-degenerately doped tungsten polycide gate buried-channel p-MOSFETs

Solid-State Electronics

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Main Authors: Lou, C.L., Chim, W.K., Chan, D.S.H., Pan, Y.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80547
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-805472015-02-13T19:52:21Z Hot-carrier reliability of non-degenerately doped tungsten polycide gate buried-channel p-MOSFETs Lou, C.L. Chim, W.K. Chan, D.S.H. Pan, Y. ELECTRICAL ENGINEERING Solid-State Electronics 41 8 1171-1176 SSELA 2014-10-07T02:58:44Z 2014-10-07T02:58:44Z 1997-08 Article Lou, C.L.,Chim, W.K.,Chan, D.S.H.,Pan, Y. (1997-08). Hot-carrier reliability of non-degenerately doped tungsten polycide gate buried-channel p-MOSFETs. Solid-State Electronics 41 (8) : 1171-1176. ScholarBank@NUS Repository. 00381101 http://scholarbank.nus.edu.sg/handle/10635/80547 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description Solid-State Electronics
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Lou, C.L.
Chim, W.K.
Chan, D.S.H.
Pan, Y.
format Article
author Lou, C.L.
Chim, W.K.
Chan, D.S.H.
Pan, Y.
spellingShingle Lou, C.L.
Chim, W.K.
Chan, D.S.H.
Pan, Y.
Hot-carrier reliability of non-degenerately doped tungsten polycide gate buried-channel p-MOSFETs
author_sort Lou, C.L.
title Hot-carrier reliability of non-degenerately doped tungsten polycide gate buried-channel p-MOSFETs
title_short Hot-carrier reliability of non-degenerately doped tungsten polycide gate buried-channel p-MOSFETs
title_full Hot-carrier reliability of non-degenerately doped tungsten polycide gate buried-channel p-MOSFETs
title_fullStr Hot-carrier reliability of non-degenerately doped tungsten polycide gate buried-channel p-MOSFETs
title_full_unstemmed Hot-carrier reliability of non-degenerately doped tungsten polycide gate buried-channel p-MOSFETs
title_sort hot-carrier reliability of non-degenerately doped tungsten polycide gate buried-channel p-mosfets
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/80547
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