Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing

10.1109/16.822296

Saved in:

Bibliographic Details
Main Author:	Chim, W.-K.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80672
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-80672
record_format	dspace
spelling	sg-nus-scholar.10635-806722023-10-30T20:08:57Z Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing Chim, W.-K. ELECTRICAL ENGINEERING 10.1109/16.822296 IEEE Transactions on Electron Devices 47 2 473-481 IETDA 2014-10-07T03:00:04Z 2014-10-07T03:00:04Z 2000 Article Chim, W.-K. (2000). Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing. IEEE Transactions on Electron Devices 47 (2) : 473-481. ScholarBank@NUS Repository. https://doi.org/10.1109/16.822296 00189383 http://scholarbank.nus.edu.sg/handle/10635/80672 000085344800032 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/16.822296
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Chim, W.-K.
format	Article
author	Chim, W.-K.
spellingShingle	Chim, W.-K. Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing
author_sort	Chim, W.-K.
title	Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing
title_short	Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing
title_full	Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing
title_fullStr	Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing
title_full_unstemmed	Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing
title_sort	latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/80672
_version_	1781783932350496768

Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing

Similar Items