Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing

Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing

10.1109/16.822296

Saved in:

書目詳細資料
主要作者:	Chim, W.-K.
其他作者:	ELECTRICAL ENGINEERING
格式:	Article
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/80672
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

相似書籍

Latent damage investigation on lateral non-uniform charge generation and stress-induced leakage current in silicon dioxides subjected to low-level electrostatic discharge impulse stressing
由: Lim, P.S., et al.
出版: (2014)

Stress-induced leakage current and lateral nonuniform charge generation in thermal oxides subjected to negative-gate-voltage impulse stressing
由: Lim, P.S., et al.
出版: (2014)

Hole injection with limited charge relaxation, lateral nonuniform hole trapping, and transient stress-induced leakage current in impulse-stressed thin (<5nm) nitrided oxides
由: Chim, W.K., et al.
出版: (2014)

Stress-induced leakage current in thin oxides under high-field impulse stressing
由: Tan, Y.N., et al.
出版: (2014)

Annealing of Fowler-Nordheim stress-induced leakage currents in thin silicon dioxide films
由: Ang, C.H., et al.
出版: (2014)

Low-frequency noise characterizattion of latent damage in thin oxides subjected to high-field impulse stressing
由: Chim, W.K., et al.
出版: (2014)

Improved model for the stress-induced leakage current in thin silicon dioxide based on conduction-band electron and valence-band electron tunneling
由: Chim, W.K., et al.
出版: (2014)

Modeling the trap generation and relaxation effects in thin oxides under unipolar and bipolar high-field impulse stressing using stress-induced leakage current
由: Chim, W.K., et al.
出版: (2014)

Gate-induced drain leakage current enhanced by plasma charging damage
由: Ma, S., et al.
出版: (2014)

Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectrics
由: Samanta, P., et al.
出版: (2014)

Stress-induced leakage current in ultra-thin gate oxide
由: Ang, Kheng Guan
出版: (2008)

Latent damage generation in thin oxides of metal-oxide-semiconductor devices under high-field impulse stress and damage characterization using low-frequency noise measurement
由: Chim, W.K., et al.
出版: (2014)

Comparison between leakage currents in thin gate oxides subjected to X-ray radiation and electrical stress degradation
由: Cho, B.J., et al.
出版: (2014)

RELIABILITY INVESTIGATION OF MOS DEVICES UNDER HIGH CURRENT IMPULSE STRESSING
由: TEH GIM LEONG
出版: (2020)

The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current
由: Lau, W. S., et al.
出版: (2013)

Comparative study of radiation- and stress-induced leakage currents in thin gate oxides
由: Ang, C.H., et al.
出版: (2014)

Direct tunneling stress-induced leakage current in NMOS devices with ultrathin gate oxides
由: Samanta, P., et al.
出版: (2014)

Stress-induced leakage current in dual-gate CMOSFETS with thin nitrided gate oxides
由: HUANG JINSHENG
出版: (2010)

Illumination Dependence of Reverse Leakage Current in Silicon Solar Cells
由: Clement, Carlos Enrico, et al.
出版: (2021)

ELECTRON BEAM INDUCED CURRENT / TUNNELING CURRENT MICROSCOPY OF THIN SILICON DIOXIDE FILMS ON SILICON
由: TUNNELING CURRENT MICROSCOPY OF THIN SILICON DIOXIDE FILMS ON SILICON PEY KIN SAN
出版: (2020)

Anomalous positive charge trapping in thin nitrided oxides under high-field impulse stressing
由: Lim, P.S., et al.
出版: (2014)

Radiation Q of electrically large loop antennas with nonuniform currents
由: Krishnan, S., et al.
出版: (2014)

Correspondence between gated-diode drain current and charge pumping current in hot-carrier stressed n- and p-MOSFET's
由: Goh, Y.H., et al.
出版: (2014)

Current-induced scour at monopile foundations subjected to lateral vibrations
由: Guan, Dawei, et al.
出版: (2021)

Linearization of nonautonomous impulsive system with nonuniform exponential dichotomy
由: Gao, Yongfei, et al.
出版: (2014)

Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias
由: Lin, Ye, et al.
出版: (2020)

Efficient methods for inductance calculation with special emphasis on nonuniform current distributions
由: Ooi, B.-L., et al.
出版: (2014)

Zirconium dioxide as a gate dielectric in metal-insulator-silicon structures and current transport mechanisms
由: Ng, T.H., et al.
出版: (2014)

Leakage current conduction mechanism in 3D capacitor embedded in Through-Silicon Via (TSV)
由: Lin, Ye, et al.
出版: (2020)

THE EFFECT OF RTV SILICON RUBBER COATING ON LEAKAGE CURRENT CHARACTERISTICS OF 150KV LONGROD INSULATORS
由: Nugroho, Alfiansyah

Direct tunneling stress-induced leakage current in ultrathin HfO 2SiO2 gate dielectric stacks
由: Samanta, P., et al.
出版: (2014)

THE INFLUENCE OF MECHANICAL PRESSURE ON SOLID-SOLID INTERFACE BASED ON PARTIAL DISCHARGE MONITORING AND LEAKAGE CURRENT MEASUREMENT UNDER DC STRESS
由: Yulianto, Eko

Method-of-moments analysis of electrically large circular-loop antennas: Nonuniform currents
由: Li, L.-W., et al.
出版: (2014)

Study of leakage current of High-K dielectrics
由: Yan, Lina
出版: (2009)

Characterization of leakage current in thin gate oxide subjected to 10 KeV X-ray irradiation
由: Ling, C.H., et al.
出版: (2014)

Current approach to the management of urinary stress incontinence.
由: Lim, F.K., et al.
出版: (2013)

The gate leakage current in graphene field-effect transistor
由: Mao, L.-F., et al.
出版: (2014)

The gate leakage current in graphene field-effect transistor
由: Mao, L.-F., et al.
出版: (2014)

Fowler-nordheim stress degradation in gate oxide: Results from gate-to-drain capacitance and charge pumping current
由: Ling, C.H., et al.
出版: (2014)

Close correspondence between forward gated-diode and charge pumping currents observed in hot-carrier stressed PMOSFET's
由: Ling, C.H.
出版: (2014)