Luminescence anomaly in band gap tailored In0.53(GaxAl1-x)0.147As quaternary alloy grown by molecular beam epitaxy

Luminescence anomaly in band gap tailored In0.53(GaxAl1-x)0.147As quaternary alloy grown by molecular beam epitaxy

Journal of Crystal Growth

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Bibliographic Details
Main Authors: Ramam, A., Chua, S.J.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
Exciton
Lattice matching
Molecular beam epitaxy
Photoluminescence
Quaternary alloy
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80693
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/80693

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