Luminescence anomaly in band gap tailored In0.53(GaxAl1-x)0.147As quaternary alloy grown by molecular beam epitaxy

Journal of Crystal Growth

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Main Authors:	Ramam, A., Chua, S.J.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Subjects:	Exciton Lattice matching Molecular beam epitaxy Photoluminescence Quaternary alloy
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80693
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-80693
record_format	dspace
spelling	sg-nus-scholar.10635-806932015-02-05T05:41:50Z Luminescence anomaly in band gap tailored In0.53(GaxAl1-x)0.147As quaternary alloy grown by molecular beam epitaxy Ramam, A. Chua, S.J. ELECTRICAL ENGINEERING Exciton Lattice matching Molecular beam epitaxy Photoluminescence Quaternary alloy Journal of Crystal Growth 175-176 PART 2 1294-1298 JCRGA 2014-10-07T03:00:18Z 2014-10-07T03:00:18Z 1997-05 Article Ramam, A.,Chua, S.J. (1997-05). Luminescence anomaly in band gap tailored In0.53(GaxAl1-x)0.147As quaternary alloy grown by molecular beam epitaxy. Journal of Crystal Growth 175-176 (PART 2) : 1294-1298. ScholarBank@NUS Repository. 00220248 http://scholarbank.nus.edu.sg/handle/10635/80693 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
topic	Exciton Lattice matching Molecular beam epitaxy Photoluminescence Quaternary alloy
spellingShingle	Exciton Lattice matching Molecular beam epitaxy Photoluminescence Quaternary alloy Ramam, A. Chua, S.J. Luminescence anomaly in band gap tailored In0.53(GaxAl1-x)0.147As quaternary alloy grown by molecular beam epitaxy
description	Journal of Crystal Growth
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Ramam, A. Chua, S.J.
format	Article
author	Ramam, A. Chua, S.J.
author_sort	Ramam, A.
title	Luminescence anomaly in band gap tailored In0.53(GaxAl1-x)0.147As quaternary alloy grown by molecular beam epitaxy
title_short	Luminescence anomaly in band gap tailored In0.53(GaxAl1-x)0.147As quaternary alloy grown by molecular beam epitaxy
title_full	Luminescence anomaly in band gap tailored In0.53(GaxAl1-x)0.147As quaternary alloy grown by molecular beam epitaxy
title_fullStr	Luminescence anomaly in band gap tailored In0.53(GaxAl1-x)0.147As quaternary alloy grown by molecular beam epitaxy
title_full_unstemmed	Luminescence anomaly in band gap tailored In0.53(GaxAl1-x)0.147As quaternary alloy grown by molecular beam epitaxy
title_sort	luminescence anomaly in band gap tailored in0.53(gaxal1-x)0.147as quaternary alloy grown by molecular beam epitaxy
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/80693
_version_	1681088935119290368

Luminescence anomaly in band gap tailored In0.53(GaxAl1-x)0.147As quaternary alloy grown by molecular beam epitaxy

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