Luminescence anomaly in band gap tailored In0.53(GaxAl1-x)0.147As quaternary alloy grown by molecular beam epitaxy
Journal of Crystal Growth
Saved in:
Main Authors: | Ramam, A., Chua, S.J. |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80693 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Raman scattering from in1-x-yGaxAlyas quaternary alloys
by: He-Xiang, H., et al.
Published: (2014) -
Investigation of phonon-assisted photoluminescence in wurtzite GaN epilayer
by: Liu, W., et al.
Published: (2014) -
Lattice vibrations in In1-x-yGaxAlxAs quaternary alloys
by: Ramam, A., et al.
Published: (2014) -
A new quaternary stratigraphy of the Kallang River Basin, Singapore: implications for urban development and geotechnical engineering in Singapore
by: Chua, Stephen, et al.
Published: (2022) -
Resonantly Pumped Bright-Triplet Exciton Lasing in Cesium Lead Bromide Perovskites
by: Ying, Guanhua, et al.
Published: (2022)