Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K

10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-7

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Bibliographic Details
Main Authors: Li, W.S., Shen, Z.X., Feng, Z.C., Chua, S.J.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81047
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Institution: National University of Singapore