Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K

10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-7

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Main Authors: Li, W.S., Shen, Z.X., Feng, Z.C., Chua, S.J.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81047
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-810472024-11-14T16:40:05Z Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K Li, W.S. Shen, Z.X. Feng, Z.C. Chua, S.J. ELECTRICAL ENGINEERING PHYSICS 10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-7 Surface and Interface Analysis 28 1 173-176 SIAND 2014-10-07T03:04:05Z 2014-10-07T03:04:05Z 1999 Article Li, W.S.,Shen, Z.X.,Feng, Z.C.,Chua, S.J. (1999). Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K. Surface and Interface Analysis 28 (1) : 173-176. ScholarBank@NUS Repository. <a href="https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-7" target="_blank">https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-7</a> 01422421 http://scholarbank.nus.edu.sg/handle/10635/81047 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-7
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Li, W.S.
Shen, Z.X.
Feng, Z.C.
Chua, S.J.
format Article
author Li, W.S.
Shen, Z.X.
Feng, Z.C.
Chua, S.J.
spellingShingle Li, W.S.
Shen, Z.X.
Feng, Z.C.
Chua, S.J.
Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K
author_sort Li, W.S.
title Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K
title_short Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K
title_full Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K
title_fullStr Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K
title_full_unstemmed Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K
title_sort raman scattering and transverse effective charge of mocvd-grown gan films between 78 and 870 k
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/81047
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