Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K
10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-7
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sg-nus-scholar.10635-810472015-01-08T17:52:02Z Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K Li, W.S. Shen, Z.X. Feng, Z.C. Chua, S.J. PHYSICS ELECTRICAL ENGINEERING 10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-7 Surface and Interface Analysis 28 1 173-176 SIAND 2014-10-07T03:04:05Z 2014-10-07T03:04:05Z 1999 Article Li, W.S.,Shen, Z.X.,Feng, Z.C.,Chua, S.J. (1999). Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K. Surface and Interface Analysis 28 (1) : 173-176. ScholarBank@NUS Repository. <a href="https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-7" target="_blank">https://doi.org/10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-7</a> 01422421 http://scholarbank.nus.edu.sg/handle/10635/81047 NOT_IN_WOS Scopus |
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10.1002/(SICI)1096-9918(199908)28:13.0.CO;2-7 |
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PHYSICS Li, W.S. Shen, Z.X. Feng, Z.C. Chua, S.J. |
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Li, W.S. Shen, Z.X. Feng, Z.C. Chua, S.J. |
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Li, W.S. Shen, Z.X. Feng, Z.C. Chua, S.J. Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K |
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Li, W.S. |
title |
Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K |
title_short |
Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K |
title_full |
Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K |
title_fullStr |
Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K |
title_full_unstemmed |
Raman scattering and transverse effective charge of MOCVD-grown GaN films between 78 and 870 K |
title_sort |
raman scattering and transverse effective charge of mocvd-grown gan films between 78 and 870 k |
publishDate |
2014 |
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http://scholarbank.nus.edu.sg/handle/10635/81047 |
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