RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.

RELATIVE HYDROGEN CONTENT IN PLASMA-ENHANCED CVD SILICON NITRIDE FILMS: SUBSTRATE TEMPERATURE DEPENDENCE AND EFFECT OF THERMAL ANNEALING.

Physica Status Solidi (A) Applied Research

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Bibliographic Details
Main Authors: Ling, C.H., Kwok, C.Y., Prasad, K.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81085
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Institution: National University of Singapore
Description
Summary:Physica Status Solidi (A) Applied Research

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