Trap generation at Si/SiO2 interface in submicrometer metal-oxide-semiconductor transistors by 4.9 eV ultraviolet irradiation

10.1063/1.357046

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Main Author:	Ling, C.H.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81304
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-813042023-10-27T07:21:50Z Trap generation at Si/SiO2 interface in submicrometer metal-oxide-semiconductor transistors by 4.9 eV ultraviolet irradiation Ling, C.H. ELECTRICAL ENGINEERING 10.1063/1.357046 Journal of Applied Physics 76 1 581-583 JAPIA 2014-10-07T03:06:52Z 2014-10-07T03:06:52Z 1994-07-01 Article Ling, C.H. (1994-07-01). Trap generation at Si/SiO2 interface in submicrometer metal-oxide-semiconductor transistors by 4.9 eV ultraviolet irradiation. Journal of Applied Physics 76 (1) : 581-583. ScholarBank@NUS Repository. https://doi.org/10.1063/1.357046 00218979 http://scholarbank.nus.edu.sg/handle/10635/81304 A1994NW31800087 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.357046
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Ling, C.H.
format	Article
author	Ling, C.H.
spellingShingle	Ling, C.H. Trap generation at Si/SiO2 interface in submicrometer metal-oxide-semiconductor transistors by 4.9 eV ultraviolet irradiation
author_sort	Ling, C.H.
title	Trap generation at Si/SiO2 interface in submicrometer metal-oxide-semiconductor transistors by 4.9 eV ultraviolet irradiation
title_short	Trap generation at Si/SiO2 interface in submicrometer metal-oxide-semiconductor transistors by 4.9 eV ultraviolet irradiation
title_full	Trap generation at Si/SiO2 interface in submicrometer metal-oxide-semiconductor transistors by 4.9 eV ultraviolet irradiation
title_fullStr	Trap generation at Si/SiO2 interface in submicrometer metal-oxide-semiconductor transistors by 4.9 eV ultraviolet irradiation
title_full_unstemmed	Trap generation at Si/SiO2 interface in submicrometer metal-oxide-semiconductor transistors by 4.9 eV ultraviolet irradiation
title_sort	trap generation at si/sio2 interface in submicrometer metal-oxide-semiconductor transistors by 4.9 ev ultraviolet irradiation
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/81304
_version_	1781783981827555328

Trap generation at Si/SiO2 interface in submicrometer metal-oxide-semiconductor transistors by 4.9 eV ultraviolet irradiation

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