Effective channel mobility and series resistance extraction for fresh and hot-carrier stressed graded junction MOSFETs using a single device

Effective channel mobility and series resistance extraction for fresh and hot-carrier stressed graded junction MOSFETs using a single device

Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA

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Bibliographic Details
Main Authors: Lou, C.L., Tan, C.B., Chim, W.K., Chan, D.S.H.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81404
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Institution: National University of Singapore
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Summary:Proceedings of the International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA

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