Investigation of quasi-breakdown mechanism in ultra-thin gate oxides
Materials Research Society Symposium - Proceedings
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2014
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sg-nus-scholar.10635-814992015-01-07T06:31:10Z Investigation of quasi-breakdown mechanism in ultra-thin gate oxides Guan, H. He, Y.D. Li, M.F. Cho, B.J. Dong, Z. ELECTRICAL ENGINEERING Materials Research Society Symposium - Proceedings 592 111-116 MRSPD 2014-10-07T03:08:57Z 2014-10-07T03:08:57Z 2000 Conference Paper Guan, H.,He, Y.D.,Li, M.F.,Cho, B.J.,Dong, Z. (2000). Investigation of quasi-breakdown mechanism in ultra-thin gate oxides. Materials Research Society Symposium - Proceedings 592 : 111-116. ScholarBank@NUS Repository. 02729172 http://scholarbank.nus.edu.sg/handle/10635/81499 NOT_IN_WOS Scopus |
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Materials Research Society Symposium - Proceedings |
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ELECTRICAL ENGINEERING |
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ELECTRICAL ENGINEERING Guan, H. He, Y.D. Li, M.F. Cho, B.J. Dong, Z. |
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Conference or Workshop Item |
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Guan, H. He, Y.D. Li, M.F. Cho, B.J. Dong, Z. |
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Guan, H. He, Y.D. Li, M.F. Cho, B.J. Dong, Z. Investigation of quasi-breakdown mechanism in ultra-thin gate oxides |
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Guan, H. |
title |
Investigation of quasi-breakdown mechanism in ultra-thin gate oxides |
title_short |
Investigation of quasi-breakdown mechanism in ultra-thin gate oxides |
title_full |
Investigation of quasi-breakdown mechanism in ultra-thin gate oxides |
title_fullStr |
Investigation of quasi-breakdown mechanism in ultra-thin gate oxides |
title_full_unstemmed |
Investigation of quasi-breakdown mechanism in ultra-thin gate oxides |
title_sort |
investigation of quasi-breakdown mechanism in ultra-thin gate oxides |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/81499 |
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