New RF LDMOS structure with improved power added efficiency for 2 GHz power amplifiers

IEEE Region 10 Annual International Conference, Proceedings/TENCON

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Main Authors: Ren, Changhong, Liang, Yung C., Xu, Shuming
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81597
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-815972015-04-06T08:45:32Z New RF LDMOS structure with improved power added efficiency for 2 GHz power amplifiers Ren, Changhong Liang, Yung C. Xu, Shuming ELECTRICAL ENGINEERING IEEE Region 10 Annual International Conference, Proceedings/TENCON 3 III-29 85QXA 2014-10-07T03:09:59Z 2014-10-07T03:09:59Z 2000 Conference Paper Ren, Changhong,Liang, Yung C.,Xu, Shuming (2000). New RF LDMOS structure with improved power added efficiency for 2 GHz power amplifiers. IEEE Region 10 Annual International Conference, Proceedings/TENCON 3 : III-29. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/81597 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description IEEE Region 10 Annual International Conference, Proceedings/TENCON
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Ren, Changhong
Liang, Yung C.
Xu, Shuming
format Conference or Workshop Item
author Ren, Changhong
Liang, Yung C.
Xu, Shuming
spellingShingle Ren, Changhong
Liang, Yung C.
Xu, Shuming
New RF LDMOS structure with improved power added efficiency for 2 GHz power amplifiers
author_sort Ren, Changhong
title New RF LDMOS structure with improved power added efficiency for 2 GHz power amplifiers
title_short New RF LDMOS structure with improved power added efficiency for 2 GHz power amplifiers
title_full New RF LDMOS structure with improved power added efficiency for 2 GHz power amplifiers
title_fullStr New RF LDMOS structure with improved power added efficiency for 2 GHz power amplifiers
title_full_unstemmed New RF LDMOS structure with improved power added efficiency for 2 GHz power amplifiers
title_sort new rf ldmos structure with improved power added efficiency for 2 ghz power amplifiers
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/81597
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