New RF LDMOS structure with improved power added efficiency for 2 GHz power amplifiers
IEEE Region 10 Annual International Conference, Proceedings/TENCON
Saved in:
Main Authors: | Ren, Changhong, Liang, Yung C., Xu, Shuming |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/81597 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
New RF LDMOS structure with improved power added efficiency for 2 GHz power amplifiers
by: Ren, Changhong, et al.
Published: (2014) -
New partial SOI LDMOS device with high power-added efficiency for 2 GHz RF power amplifier applications
by: Liang, Y.C., et al.
Published: (2014) -
120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit
by: Xu, S., et al.
Published: (2014) -
Superjunction power LDMOS on partial SOI platform
by: Chen, Y., et al.
Published: (2014) -
Partial SOI superjunction power LDMOS for PIC application
by: Chen, Y., et al.
Published: (2014)