120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit

120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit

10.1109/16.870584

Saved in:
Bibliographic Details
Main Authors: Xu, S., Gan, K.P., Samudra, G.S., Liang, Y.C., Sin, J.K.O.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80269
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/80269

Similar Items