120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit

10.1109/16.870584

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Main Authors: Xu, S., Gan, K.P., Samudra, G.S., Liang, Y.C., Sin, J.K.O.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80269
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-802692024-11-09T07:32:45Z 120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit Xu, S. Gan, K.P. Samudra, G.S. Liang, Y.C. Sin, J.K.O. ELECTRICAL ENGINEERING 10.1109/16.870584 IEEE Transactions on Electron Devices 47 10 1980-1985 IETDA 2014-10-07T02:55:40Z 2014-10-07T02:55:40Z 2000-10 Article Xu, S., Gan, K.P., Samudra, G.S., Liang, Y.C., Sin, J.K.O. (2000-10). 120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit. IEEE Transactions on Electron Devices 47 (10) : 1980-1985. ScholarBank@NUS Repository. https://doi.org/10.1109/16.870584 00189383 http://scholarbank.nus.edu.sg/handle/10635/80269 000089570300029 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1109/16.870584
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Xu, S.
Gan, K.P.
Samudra, G.S.
Liang, Y.C.
Sin, J.K.O.
format Article
author Xu, S.
Gan, K.P.
Samudra, G.S.
Liang, Y.C.
Sin, J.K.O.
spellingShingle Xu, S.
Gan, K.P.
Samudra, G.S.
Liang, Y.C.
Sin, J.K.O.
120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit
author_sort Xu, S.
title 120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit
title_short 120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit
title_full 120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit
title_fullStr 120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit
title_full_unstemmed 120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit
title_sort 120 v interdigitated-drain ldmos (idldmos) on soi substrate breaking power ldmos limit
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/80269
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