120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit
10.1109/16.870584
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| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
2014
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80269 |
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| Institution: | National University of Singapore |