120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit

• Main Authors: Xu, S., Gan, K.P., Samudra, G.S., Liang, Y.C., Sin, J.K.O.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/80269
• Institution: National University of Singapore

10.1109/16.870584