Formation of ultra-shallow p+/n junctions in silicon-on-insulator (SOI) substrate using laser annealing

Laser annealing (LA), in which the laser melts the surface layer of silicon and causes the dopants to be distributed uniformly within the melted region, produces abrupt, highly activated and ultrashallow junctions. The degree of melting is determined by the extent of laser absorption and rate of hea...

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Bibliographic Details
Main Authors: Wang, X. C., Pey, Kin Leong, Lee, Pooi See, Ong, K. K., Wee, A. T. S., Chong, Y. F., Yeo, K. L.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/97291
http://hdl.handle.net/10220/10532
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Institution: Nanyang Technological University
Language: English