Hot carrier reliability perspective on silicon-on-insulator lateral double-diffused MOSFET (LDMOS)

• Main Author: Liao, Jie
• Other Authors: Tan Cher Ming
• Format: Theses and Dissertations
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: https://hdl.handle.net/10356/20920
• Institution: Nanyang Technological University

Silicon-on-insulator (SOI) device has a buried silicon oxide (Buried Oxide, or BOX) layer extending across the entire wafer. Recently, there is an increased interest in SOI wafers for application to the fabrication of advanced CMOS ICs. SOI technologies offer a large number of advantages in terms of...