Hot carrier reliability perspective on silicon-on-insulator lateral double-diffused MOSFET (LDMOS)
Silicon-on-insulator (SOI) device has a buried silicon oxide (Buried Oxide, or BOX) layer extending across the entire wafer. Recently, there is an increased interest in SOI wafers for application to the fabrication of advanced CMOS ICs. SOI technologies offer a large number of advantages in terms of...
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| 格式: | Theses and Dissertations |
| 語言: | English |
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2010
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/20920 |
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| 機構: | Nanyang Technological University |
| 語言: | English |