Tunable Oxide-Bypassed VDMOS (OBVDMOS): Breaking the silicon limit for the second generation

Tunable Oxide-Bypassed VDMOS (OBVDMOS): Breaking the silicon limit for the second generation

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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Bibliographic Details
Main Authors: Liang, Y.C., Yang, X., Samudra, G.S., Gan, K.P., Liu, Y.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
HV small signal amplifier
Specific on-resistance
Superjunction device
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84325
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/84325

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