Tunable Oxide-Bypassed VDMOS (OBVDMOS): Breaking the silicon limit for the second generation

• Main Authors: Liang, Y.C., Yang, X., Samudra, G.S., Gan, K.P., Liu, Y.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: HV small signal amplifier; Specific on-resistance; Superjunction device
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84325
• Institution: National University of Singapore

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)