Tunable Oxide-Bypassed VDMOS (OBVDMOS): Breaking the silicon limit for the second generation

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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Bibliographic Details
Main Authors:	Liang, Y.C., Yang, X., Samudra, G.S., Gan, K.P., Liu, Y.
Other Authors:	INSTITUTE OF MICROELECTRONICS
Format:	Conference or Workshop Item
Published:	2014
Subjects:	HV small signal amplifier Specific on-resistance Superjunction device
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84325
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84325
record_format	dspace
spelling	sg-nus-scholar.10635-843252024-11-11T08:20:55Z Tunable Oxide-Bypassed VDMOS (OBVDMOS): Breaking the silicon limit for the second generation Liang, Y.C. Yang, X. Samudra, G.S. Gan, K.P. Liu, Y. INSTITUTE OF MICROELECTRONICS ELECTRICAL & COMPUTER ENGINEERING HV small signal amplifier Specific on-resistance Superjunction device IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) 201-204 PISDE 2014-10-07T04:51:24Z 2014-10-07T04:51:24Z 2002 Conference Paper Liang, Y.C.,Yang, X.,Samudra, G.S.,Gan, K.P.,Liu, Y. (2002). Tunable Oxide-Bypassed VDMOS (OBVDMOS): Breaking the silicon limit for the second generation. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) : 201-204. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/84325 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	HV small signal amplifier Specific on-resistance Superjunction device
spellingShingle	HV small signal amplifier Specific on-resistance Superjunction device Liang, Y.C. Yang, X. Samudra, G.S. Gan, K.P. Liu, Y. Tunable Oxide-Bypassed VDMOS (OBVDMOS): Breaking the silicon limit for the second generation
description	IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)
author2	INSTITUTE OF MICROELECTRONICS
author_facet	INSTITUTE OF MICROELECTRONICS Liang, Y.C. Yang, X. Samudra, G.S. Gan, K.P. Liu, Y.
format	Conference or Workshop Item
author	Liang, Y.C. Yang, X. Samudra, G.S. Gan, K.P. Liu, Y.
author_sort	Liang, Y.C.
title	Tunable Oxide-Bypassed VDMOS (OBVDMOS): Breaking the silicon limit for the second generation
title_short	Tunable Oxide-Bypassed VDMOS (OBVDMOS): Breaking the silicon limit for the second generation
title_full	Tunable Oxide-Bypassed VDMOS (OBVDMOS): Breaking the silicon limit for the second generation
title_fullStr	Tunable Oxide-Bypassed VDMOS (OBVDMOS): Breaking the silicon limit for the second generation
title_full_unstemmed	Tunable Oxide-Bypassed VDMOS (OBVDMOS): Breaking the silicon limit for the second generation
title_sort	tunable oxide-bypassed vdmos (obvdmos): breaking the silicon limit for the second generation
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84325
_version_	1821199829377744896

Tunable Oxide-Bypassed VDMOS (OBVDMOS): Breaking the silicon limit for the second generation

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