Tunable Oxide-Bypassed VDMOS (OBVDMOS): Breaking the silicon limit for the second generation
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Conference or Workshop Item |
| Published: |
2014
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| Subjects: | |
| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/84325 |
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| Institution: | National University of Singapore |