Physical analytical model for LT-GaAs and LT-Al0.3Ga0.7 As MISFET Devices

Physical analytical model for LT-GaAs and LT-Al0.3Ga0.7 As MISFET Devices

Proceedings of the IEEE Hong Kong Electron Devices Meeting

Saved in:
Bibliographic Details
Main Authors: Rao, R.V.V.V.J., Chong, T.C., Tan, L.S., Lau, W.S., Liou, J.J.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81674
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Description
Summary:Proceedings of the IEEE Hong Kong Electron Devices Meeting

Similar Items