Physical analytical model for LT-GaAs and LT-Al0.3Ga0.7 As MISFET Devices

• Main Authors: Rao, R.V.V.V.J., Chong, T.C., Tan, L.S., Lau, W.S., Liou, J.J.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/81674
• Institution: National University of Singapore

Proceedings of the IEEE Hong Kong Electron Devices Meeting