Physical analytical model for LT-GaAs and LT-Al0.3Ga0.7 As MISFET Devices

Proceedings of the IEEE Hong Kong Electron Devices Meeting

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Bibliographic Details
Main Authors:	Rao, R.V.V.V.J., Chong, T.C., Tan, L.S., Lau, W.S., Liou, J.J.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81674
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-81674
record_format	dspace
spelling	sg-nus-scholar.10635-816742015-01-08T00:47:17Z Physical analytical model for LT-GaAs and LT-Al0.3Ga0.7 As MISFET Devices Rao, R.V.V.V.J. Chong, T.C. Tan, L.S. Lau, W.S. Liou, J.J. ELECTRICAL ENGINEERING CENTRE FOR WIRELESS COMMUNICATIONS Proceedings of the IEEE Hong Kong Electron Devices Meeting 134-136 2014-10-07T03:10:48Z 2014-10-07T03:10:48Z 1999 Conference Paper Rao, R.V.V.V.J.,Chong, T.C.,Tan, L.S.,Lau, W.S.,Liou, J.J. (1999). Physical analytical model for LT-GaAs and LT-Al0.3Ga0.7 As MISFET Devices. Proceedings of the IEEE Hong Kong Electron Devices Meeting : 134-136. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/81674 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	Proceedings of the IEEE Hong Kong Electron Devices Meeting
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Rao, R.V.V.V.J. Chong, T.C. Tan, L.S. Lau, W.S. Liou, J.J.
format	Conference or Workshop Item
author	Rao, R.V.V.V.J. Chong, T.C. Tan, L.S. Lau, W.S. Liou, J.J.
spellingShingle	Rao, R.V.V.V.J. Chong, T.C. Tan, L.S. Lau, W.S. Liou, J.J. Physical analytical model for LT-GaAs and LT-Al0.3Ga0.7 As MISFET Devices
author_sort	Rao, R.V.V.V.J.
title	Physical analytical model for LT-GaAs and LT-Al0.3Ga0.7 As MISFET Devices
title_short	Physical analytical model for LT-GaAs and LT-Al0.3Ga0.7 As MISFET Devices
title_full	Physical analytical model for LT-GaAs and LT-Al0.3Ga0.7 As MISFET Devices
title_fullStr	Physical analytical model for LT-GaAs and LT-Al0.3Ga0.7 As MISFET Devices
title_full_unstemmed	Physical analytical model for LT-GaAs and LT-Al0.3Ga0.7 As MISFET Devices
title_sort	physical analytical model for lt-gaas and lt-al0.3ga0.7 as misfet devices
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/81674
_version_	1681089114223411200

Physical analytical model for LT-GaAs and LT-Al0.3Ga0.7 As MISFET Devices

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