Threshold voltage instabilities of fresh flash memory devices caused by plasma charging
International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings
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2014
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sg-nus-scholar.10635-817842015-01-08T23:40:49Z Threshold voltage instabilities of fresh flash memory devices caused by plasma charging Cha, C.L. Chor, E.F. Gong, H. Teo, T.H. Zhang, A.Q. Chan, L. ELECTRICAL ENGINEERING MATERIALS SCIENCE International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings 120-123 243 2014-10-07T03:12:01Z 2014-10-07T03:12:01Z 1998 Conference Paper Cha, C.L.,Chor, E.F.,Gong, H.,Teo, T.H.,Zhang, A.Q.,Chan, L. (1998). Threshold voltage instabilities of fresh flash memory devices caused by plasma charging. International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings : 120-123. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/81784 NOT_IN_WOS Scopus |
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International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings |
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ELECTRICAL ENGINEERING |
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ELECTRICAL ENGINEERING Cha, C.L. Chor, E.F. Gong, H. Teo, T.H. Zhang, A.Q. Chan, L. |
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Conference or Workshop Item |
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Cha, C.L. Chor, E.F. Gong, H. Teo, T.H. Zhang, A.Q. Chan, L. |
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Cha, C.L. Chor, E.F. Gong, H. Teo, T.H. Zhang, A.Q. Chan, L. Threshold voltage instabilities of fresh flash memory devices caused by plasma charging |
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Cha, C.L. |
title |
Threshold voltage instabilities of fresh flash memory devices caused by plasma charging |
title_short |
Threshold voltage instabilities of fresh flash memory devices caused by plasma charging |
title_full |
Threshold voltage instabilities of fresh flash memory devices caused by plasma charging |
title_fullStr |
Threshold voltage instabilities of fresh flash memory devices caused by plasma charging |
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Threshold voltage instabilities of fresh flash memory devices caused by plasma charging |
title_sort |
threshold voltage instabilities of fresh flash memory devices caused by plasma charging |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/81784 |
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