Threshold voltage instabilities of fresh flash memory devices caused by plasma charging

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

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Main Authors: Cha, C.L., Chor, E.F., Gong, H., Teo, T.H., Zhang, A.Q., Chan, L.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81784
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-817842015-01-08T23:40:49Z Threshold voltage instabilities of fresh flash memory devices caused by plasma charging Cha, C.L. Chor, E.F. Gong, H. Teo, T.H. Zhang, A.Q. Chan, L. ELECTRICAL ENGINEERING MATERIALS SCIENCE International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings 120-123 243 2014-10-07T03:12:01Z 2014-10-07T03:12:01Z 1998 Conference Paper Cha, C.L.,Chor, E.F.,Gong, H.,Teo, T.H.,Zhang, A.Q.,Chan, L. (1998). Threshold voltage instabilities of fresh flash memory devices caused by plasma charging. International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings : 120-123. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/81784 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Cha, C.L.
Chor, E.F.
Gong, H.
Teo, T.H.
Zhang, A.Q.
Chan, L.
format Conference or Workshop Item
author Cha, C.L.
Chor, E.F.
Gong, H.
Teo, T.H.
Zhang, A.Q.
Chan, L.
spellingShingle Cha, C.L.
Chor, E.F.
Gong, H.
Teo, T.H.
Zhang, A.Q.
Chan, L.
Threshold voltage instabilities of fresh flash memory devices caused by plasma charging
author_sort Cha, C.L.
title Threshold voltage instabilities of fresh flash memory devices caused by plasma charging
title_short Threshold voltage instabilities of fresh flash memory devices caused by plasma charging
title_full Threshold voltage instabilities of fresh flash memory devices caused by plasma charging
title_fullStr Threshold voltage instabilities of fresh flash memory devices caused by plasma charging
title_full_unstemmed Threshold voltage instabilities of fresh flash memory devices caused by plasma charging
title_sort threshold voltage instabilities of fresh flash memory devices caused by plasma charging
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/81784
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