Threshold voltage instabilities of fresh flash memory devices caused by plasma charging

• Main Authors: Cha, C.L., Chor, E.F., Gong, H., Teo, T.H., Zhang, A.Q., Chan, L.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/81784
• Institution: National University of Singapore

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings