A comparison of the selective etching characteristics of conventional and low-temperature-grown GaAs over AlAs by various etching solutions

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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Bibliographic Details
Main Authors: Zhao, R., Lau, W.S., Chong, T.C., Li, M.F.
Other Authors: ELECTRICAL ENGINEERING
Format: Review
Published: 2014
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81814
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Institution: National University of Singapore
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Summary:Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers