Average-8T differential-sensing subthreshold SRAM with bit interleaving and 1k bits per bitline

Average-8T differential-sensing subthreshold SRAM with bit interleaving and 1k bits per bitline

10.1109/TVLSI.2013.2265265

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Bibliographic Details
Main Authors: Khayatzadeh, M., Lian, Y.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Average-8T
bit interleaving
differential
SRAM
subthreshold
ultralow power.
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81997
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/81997

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