Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate

Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate

10.1063/1.4856275

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Bibliographic Details
Main Authors: Antwi, K.K.A., Soh, C.B., Wee, Q., Tan, R.J.N., Yang, P., Tan, H.R., Sun, L.F., Shen, Z.X., Chua, S.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82110
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Institution: National University of Singapore
Description
Summary:10.1063/1.4856275

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