Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate

• Main Authors: Antwi, K.K.A., Soh, C.B., Wee, Q., Tan, R.J.N., Yang, P., Tan, H.R., Sun, L.F., Shen, Z.X., Chua, S.J.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82110
• Institution: National University of Singapore

10.1063/1.4856275