Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate

10.1063/1.4856275

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Bibliographic Details
Main Authors:	Antwi, K.K.A., Soh, C.B., Wee, Q., Tan, R.J.N., Yang, P., Tan, H.R., Sun, L.F., Shen, Z.X., Chua, S.J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82110
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82110
record_format	dspace
spelling	sg-nus-scholar.10635-821102024-11-14T02:30:15Z Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate Antwi, K.K.A. Soh, C.B. Wee, Q. Tan, R.J.N. Yang, P. Tan, H.R. Sun, L.F. Shen, Z.X. Chua, S.J. ELECTRICAL & COMPUTER ENGINEERING SINGAPORE SYNCHROTRON LIGHT SOURCE 10.1063/1.4856275 Journal of Applied Physics 114 24 - JAPIA 2014-10-07T04:25:30Z 2014-10-07T04:25:30Z 2013-12-28 Article Antwi, K.K.A., Soh, C.B., Wee, Q., Tan, R.J.N., Yang, P., Tan, H.R., Sun, L.F., Shen, Z.X., Chua, S.J. (2013-12-28). Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate. Journal of Applied Physics 114 (24) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4856275 00218979 http://scholarbank.nus.edu.sg/handle/10635/82110 000329173200020 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.4856275
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Antwi, K.K.A. Soh, C.B. Wee, Q. Tan, R.J.N. Yang, P. Tan, H.R. Sun, L.F. Shen, Z.X. Chua, S.J.
format	Article
author	Antwi, K.K.A. Soh, C.B. Wee, Q. Tan, R.J.N. Yang, P. Tan, H.R. Sun, L.F. Shen, Z.X. Chua, S.J.
spellingShingle	Antwi, K.K.A. Soh, C.B. Wee, Q. Tan, R.J.N. Yang, P. Tan, H.R. Sun, L.F. Shen, Z.X. Chua, S.J. Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate
author_sort	Antwi, K.K.A.
title	Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate
title_short	Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate
title_full	Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate
title_fullStr	Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate
title_full_unstemmed	Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate
title_sort	crystallographically tilted and partially strain relaxed gan grown on inclined {111} facets etched on si(100) substrate
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82110
_version_	1821234336584695808

Crystallographically tilted and partially strain relaxed GaN grown on inclined {111} facets etched on Si(100) substrate

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