Deep anisotropic LiNbO 3 etching with SF 6/Ar inductively coupled plasmas

10.1116/1.3674282

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Bibliographic Details
Main Authors: Jun, D., Wei, J., Png, C.E., Guangyuan, S., Son, J., Yang, H., Danner, A.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82115
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Institution: National University of Singapore