Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers

Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers

10.1088/0268-1242/16/8/312

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Bibliographic Details
Main Authors: Samanta, S.K., Maikap, S., Bera, L.K., Banerjee, H.D., Maiti, C.K.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82204
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Institution: National University of Singapore
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Summary:10.1088/0268-1242/16/8/312

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