Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers
10.1088/0268-1242/16/8/312
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2014
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sg-nus-scholar.10635-822042023-10-27T07:55:43Z Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers Samanta, S.K. Maikap, S. Bera, L.K. Banerjee, H.D. Maiti, C.K. ELECTRICAL & COMPUTER ENGINEERING 10.1088/0268-1242/16/8/312 Semiconductor Science and Technology 16 8 704-707 SSTEE 2014-10-07T04:26:36Z 2014-10-07T04:26:36Z 2001-08 Article Samanta, S.K., Maikap, S., Bera, L.K., Banerjee, H.D., Maiti, C.K. (2001-08). Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers. Semiconductor Science and Technology 16 (8) : 704-707. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/16/8/312 02681242 http://scholarbank.nus.edu.sg/handle/10635/82204 000170465700015 Scopus |
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Singapore Singapore |
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10.1088/0268-1242/16/8/312 |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Samanta, S.K. Maikap, S. Bera, L.K. Banerjee, H.D. Maiti, C.K. |
| format |
Article |
| author |
Samanta, S.K. Maikap, S. Bera, L.K. Banerjee, H.D. Maiti, C.K. |
| spellingShingle |
Samanta, S.K. Maikap, S. Bera, L.K. Banerjee, H.D. Maiti, C.K. Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers |
| author_sort |
Samanta, S.K. |
| title |
Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers |
| title_short |
Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers |
| title_full |
Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers |
| title_fullStr |
Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers |
| title_full_unstemmed |
Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers |
| title_sort |
effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-si0.82ge0.18 layers |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/82204 |
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1781784080128409600 |