Effects of fluorine incorporation and forming gas annealing on high- k gated germanium metal-oxide-semiconductor with GeO2 surface passivation
10.1063/1.2966367
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sg-nus-scholar.10635-822262023-10-30T22:33:17Z Effects of fluorine incorporation and forming gas annealing on high- k gated germanium metal-oxide-semiconductor with GeO2 surface passivation Xie, R. He, W. Yu, M. Zhu, C. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.2966367 Applied Physics Letters 93 7 - APPLA 2014-10-07T04:26:52Z 2014-10-07T04:26:52Z 2008 Article Xie, R., He, W., Yu, M., Zhu, C. (2008). Effects of fluorine incorporation and forming gas annealing on high- k gated germanium metal-oxide-semiconductor with GeO2 surface passivation. Applied Physics Letters 93 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2966367 00036951 http://scholarbank.nus.edu.sg/handle/10635/82226 000259010300087 Scopus |
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Singapore Singapore |
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| description |
10.1063/1.2966367 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Xie, R. He, W. Yu, M. Zhu, C. |
| format |
Article |
| author |
Xie, R. He, W. Yu, M. Zhu, C. |
| spellingShingle |
Xie, R. He, W. Yu, M. Zhu, C. Effects of fluorine incorporation and forming gas annealing on high- k gated germanium metal-oxide-semiconductor with GeO2 surface passivation |
| author_sort |
Xie, R. |
| title |
Effects of fluorine incorporation and forming gas annealing on high- k gated germanium metal-oxide-semiconductor with GeO2 surface passivation |
| title_short |
Effects of fluorine incorporation and forming gas annealing on high- k gated germanium metal-oxide-semiconductor with GeO2 surface passivation |
| title_full |
Effects of fluorine incorporation and forming gas annealing on high- k gated germanium metal-oxide-semiconductor with GeO2 surface passivation |
| title_fullStr |
Effects of fluorine incorporation and forming gas annealing on high- k gated germanium metal-oxide-semiconductor with GeO2 surface passivation |
| title_full_unstemmed |
Effects of fluorine incorporation and forming gas annealing on high- k gated germanium metal-oxide-semiconductor with GeO2 surface passivation |
| title_sort |
effects of fluorine incorporation and forming gas annealing on high- k gated germanium metal-oxide-semiconductor with geo2 surface passivation |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/82226 |
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1781784085599879168 |