Effects of fluorine incorporation and forming gas annealing on high- k gated germanium metal-oxide-semiconductor with GeO2 surface passivation

10.1063/1.2966367

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Bibliographic Details
Main Authors: Xie, R., He, W., Yu, M., Zhu, C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82226
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Institution: National University of Singapore