Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors

Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors

10.1063/1.1788888

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Bibliographic Details
Main Authors: Low, T., Li, M.F., Shen, C., Yeo, Y.-C., Hou, Y.T., Zhu, C., Chin, A., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82262
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Institution: National University of Singapore
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Summary:10.1063/1.1788888

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