Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors

10.1063/1.1788888

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Main Authors: Low, T., Li, M.F., Shen, C., Yeo, Y.-C., Hou, Y.T., Zhu, C., Chin, A., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82262
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-822622023-10-25T23:02:08Z Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors Low, T. Li, M.F. Shen, C. Yeo, Y.-C. Hou, Y.T. Zhu, C. Chin, A. Kwong, D.L. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.1788888 Applied Physics Letters 85 12 2402-2404 APPLA 2014-10-07T04:27:17Z 2014-10-07T04:27:17Z 2004-09-20 Article Low, T., Li, M.F., Shen, C., Yeo, Y.-C., Hou, Y.T., Zhu, C., Chin, A., Kwong, D.L. (2004-09-20). Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors. Applied Physics Letters 85 (12) : 2402-2404. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1788888 00036951 http://scholarbank.nus.edu.sg/handle/10635/82262 000224145300083 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1063/1.1788888
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Low, T.
Li, M.F.
Shen, C.
Yeo, Y.-C.
Hou, Y.T.
Zhu, C.
Chin, A.
Kwong, D.L.
format Article
author Low, T.
Li, M.F.
Shen, C.
Yeo, Y.-C.
Hou, Y.T.
Zhu, C.
Chin, A.
Kwong, D.L.
spellingShingle Low, T.
Li, M.F.
Shen, C.
Yeo, Y.-C.
Hou, Y.T.
Zhu, C.
Chin, A.
Kwong, D.L.
Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors
author_sort Low, T.
title Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors
title_short Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors
title_full Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors
title_fullStr Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors
title_full_unstemmed Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors
title_sort electron mobility in ge and strained-si channel ultrathin-body metal-oxide semi conductor field-effect transistors
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/82262
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