Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors
10.1063/1.1788888
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sg-nus-scholar.10635-822622023-10-25T23:02:08Z Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors Low, T. Li, M.F. Shen, C. Yeo, Y.-C. Hou, Y.T. Zhu, C. Chin, A. Kwong, D.L. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.1788888 Applied Physics Letters 85 12 2402-2404 APPLA 2014-10-07T04:27:17Z 2014-10-07T04:27:17Z 2004-09-20 Article Low, T., Li, M.F., Shen, C., Yeo, Y.-C., Hou, Y.T., Zhu, C., Chin, A., Kwong, D.L. (2004-09-20). Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors. Applied Physics Letters 85 (12) : 2402-2404. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1788888 00036951 http://scholarbank.nus.edu.sg/handle/10635/82262 000224145300083 Scopus |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Low, T. Li, M.F. Shen, C. Yeo, Y.-C. Hou, Y.T. Zhu, C. Chin, A. Kwong, D.L. |
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Low, T. Li, M.F. Shen, C. Yeo, Y.-C. Hou, Y.T. Zhu, C. Chin, A. Kwong, D.L. |
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Low, T. Li, M.F. Shen, C. Yeo, Y.-C. Hou, Y.T. Zhu, C. Chin, A. Kwong, D.L. Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors |
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Low, T. |
title |
Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors |
title_short |
Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors |
title_full |
Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors |
title_fullStr |
Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors |
title_full_unstemmed |
Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors |
title_sort |
electron mobility in ge and strained-si channel ultrathin-body metal-oxide semi conductor field-effect transistors |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/82262 |
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