Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors

Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors

10.1063/1.1788888

Saved in:

Bibliographic Details
Main Authors:	Low, T., Li, M.F., Shen, C., Yeo, Y.-C., Hou, Y.T., Zhu, C., Chin, A., Kwong, D.L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82262
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Similar Items

Strain optimization in ultrathin body transistors with silicon-germanium source and drain stressors
by: Madan, A., et al.
Published: (2014)

Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors
by: Low, T., et al.
Published: (2014)

Effect of body thickness on the electrical performance of ballistic n-channel GaSb double-gate ultrathin-body transistor
by: Guo Y., et al.
Published: (2016)

Strained Multiple - Gate Transistors With Si/SiC and Si/SiGe Heterojunctions
by: LIOW TSUNG-YANG
Published: (2011)

Sub-30nm strained p-channel fin-type field-effect transistors with condensed SiGe source/drain stressors
by: Tan, K.-M., et al.
Published: (2014)

Source/drain germanium condensation for P-channel strained ultra-thin body transistors
by: Chui, K.-J., et al.
Published: (2014)

Electron mobility enhancement using ultrathin pure Ge on Si substrate
by: Yeo, C.C., et al.
Published: (2014)

Reduced carrier backscattering in heterojunction SiGe nanowire channels
by: Jiang, Y., et al.
Published: (2014)

Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2gate dielectric
by: Yeo, C.C., et al.
Published: (2011)

Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si 1-xGex/Si nMOSFETs with HfO2 gate dielectric
by: Yeo, C.C., et al.
Published: (2014)

Germanium source and drain stressors for ultrathin-body and nanowire field-effect transistors
by: Liow, T.-Y., et al.
Published: (2014)

Dopant segregated Pt and Ni germanosilicide Schottky S/D p-MOSFETs with strained Si-SiGe channel
by: Zang, H., et al.
Published: (2014)

UV Raman studies of channel stress in transistors with embedded SiGe source and drain
by: Wong, Choun Pei
Published: (2012)

Dynamic bias-temperature instability in ultrathin SiO 2 and HfO 2 metal-oxide-semiconductor field effect transistors and its impact on device lifetime
by: Li, M.F., et al.
Published: (2014)

Sub-100 nanometer channel length Ge/Si nanowire transistors with potential for 2 THz switching speed
by: Hu, Y., et al.
Published: (2014)

Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors
by: Low, Tony, et al.
Published: (2013)

Surface roughness investigation of semi-conductor wafers
by: Tay, C.J., et al.
Published: (2014)

Light Emission Near 1.3 μm Using ITO-Al 2O 3-Si 0.3Ge 0.7-Si Tunnel Diodes
by: Lin, C.Y., et al.
Published: (2014)

SiGe amorphization during Ge condensation in silicon germanium on insulator
by: Balakumar, S., et al.
Published: (2014)

Gate dielectrics on strained-Si/SiGe heterolayers
by: Maiti, C.K., et al.
Published: (2014)

Omega-gate p-MOSFET with nanowirelike SiGe/Si core/shell channel
by: Jiang, Y., et al.
Published: (2014)

Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors
by: Hou, Y.T., et al.
Published: (2014)

Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors
by: Hou, Y.T., et al.
Published: (2014)

Realization of silicon-germanium-tin (SiGeSn) source/ drain stressors by Sn implant and solid phase epitaxy for strain engineering in SiGe channel P-MOSFETs
by: Wang, G.H., et al.
Published: (2014)

Strain relaxation in SiGe/Si heteroepitaxy
by: Wong, Lydia Helena
Published: (2010)

Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing
by: Wang, G.H., et al.
Published: (2014)

Fabrication of high Ge content SiGe layer on Si by Ge condensation technique
by: Balakumar, S., et al.
Published: (2014)

Strained channel transistor using strain field induced by source and drain stressors
by: Yeo, Y.-C., et al.
Published: (2014)

A pseudopotential method for investigating the surface roughness effect in ultrathin body transistors
by: Zhu, Z.-G., et al.
Published: (2014)

Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
by: Wang, L., et al.
Published: (2014)

Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices
by: Zang, H., et al.
Published: (2014)

Determination of Raman phonon strain shift coefficient of strained silicon and strained SiGe
by: Wong, L.H., et al.
Published: (2014)

High-k gate stack formation on strained SiGe substrate for MOSFET applications
by: Zhu, C., et al.
Published: (2014)

Optically controlled frequency selective surface with semi-conductor substrate
by: Chia, Y.W.M., et al.
Published: (2014)

Strain engineering for hole mobility enhancement in P-channel field-effect transistors
by: Yeo, Y.-C.
Published: (2014)

Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance
by: Loh, W.-Y., et al.
Published: (2014)

Semi-conductor wastewater pre-treatment for water reclamation
by: Lee, Bing Xuan
Published: (2023)

First principle study of Si and Ge band structure for UTB MOSFETs applications
by: Low, T., et al.
Published: (2014)

Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8 Ge0.2 buffer
by: Loh, T.H., et al.
Published: (2014)

Strain-transfer structure beneath the transistor channel for increasing the strain effects of lattice-mismatched source and drain stressors
by: Yeo, Y.-C., et al.
Published: (2014)