First principle study of Si and Ge band structure for UTB MOSFETs applications

First principle study of Si and Ge band structure for UTB MOSFETs applications

2005 International Semiconductor Device Research Symposium

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Bibliographic Details
Main Authors: Low, T., Feng, Y.P., Li, M.F., Samudra, G., Yeo, Y.C., Bai, P., Chan, L., Kwong, D.L.
Other Authors: PHYSICS
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/70340
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/70340

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