First principle study of Si and Ge band structure for UTB MOSFETs applications

First principle study of Si and Ge band structure for UTB MOSFETs applications

2005 International Semiconductor Device Research Symposium

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Main Authors: Low, T., Feng, Y.P., Li, M.F., Samudra, G., Yeo, Y.C., Bai, P., Chan, L., Kwong, D.L.
Other Authors: PHYSICS
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/70340
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-703402015-01-16T15:36:52Z First principle study of Si and Ge band structure for UTB MOSFETs applications Low, T. Feng, Y.P. Li, M.F. Samudra, G. Yeo, Y.C. Bai, P. Chan, L. Kwong, D.L. PHYSICS ELECTRICAL & COMPUTER ENGINEERING 2005 International Semiconductor Device Research Symposium 2005 358-359 2014-06-19T03:11:02Z 2014-06-19T03:11:02Z 2005 Conference Paper Low, T.,Feng, Y.P.,Li, M.F.,Samudra, G.,Yeo, Y.C.,Bai, P.,Chan, L.,Kwong, D.L. (2005). First principle study of Si and Ge band structure for UTB MOSFETs applications. 2005 International Semiconductor Device Research Symposium 2005 : 358-359. ScholarBank@NUS Repository. 1424400848 http://scholarbank.nus.edu.sg/handle/10635/70340 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description 2005 International Semiconductor Device Research Symposium
author2 PHYSICS
author_facet PHYSICS
Low, T.
Feng, Y.P.
Li, M.F.
Samudra, G.
Yeo, Y.C.
Bai, P.
Chan, L.
Kwong, D.L.
format Conference or Workshop Item
author Low, T.
Feng, Y.P.
Li, M.F.
Samudra, G.
Yeo, Y.C.
Bai, P.
Chan, L.
Kwong, D.L.
spellingShingle Low, T.
Feng, Y.P.
Li, M.F.
Samudra, G.
Yeo, Y.C.
Bai, P.
Chan, L.
Kwong, D.L.
First principle study of Si and Ge band structure for UTB MOSFETs applications
author_sort Low, T.
title First principle study of Si and Ge band structure for UTB MOSFETs applications
title_short First principle study of Si and Ge band structure for UTB MOSFETs applications
title_full First principle study of Si and Ge band structure for UTB MOSFETs applications
title_fullStr First principle study of Si and Ge band structure for UTB MOSFETs applications
title_full_unstemmed First principle study of Si and Ge band structure for UTB MOSFETs applications
title_sort first principle study of si and ge band structure for utb mosfets applications
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/70340
_version_ 1681087181214449664

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