First principle study of Si and Ge band structure for UTB MOSFETs applications

2005 International Semiconductor Device Research Symposium

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Bibliographic Details
Main Authors:	Low, T., Feng, Y.P., Li, M.F., Samudra, G., Yeo, Y.C., Bai, P., Chan, L., Kwong, D.L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/70340
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-703402024-11-10T17:47:26Z First principle study of Si and Ge band structure for UTB MOSFETs applications Low, T. Feng, Y.P. Li, M.F. Samudra, G. Yeo, Y.C. Bai, P. Chan, L. Kwong, D.L. ELECTRICAL & COMPUTER ENGINEERING PHYSICS 2005 International Semiconductor Device Research Symposium 2005 358-359 2014-06-19T03:11:02Z 2014-06-19T03:11:02Z 2005 Conference Paper Low, T.,Feng, Y.P.,Li, M.F.,Samudra, G.,Yeo, Y.C.,Bai, P.,Chan, L.,Kwong, D.L. (2005). First principle study of Si and Ge band structure for UTB MOSFETs applications. 2005 International Semiconductor Device Research Symposium 2005 : 358-359. ScholarBank@NUS Repository. 1424400848 http://scholarbank.nus.edu.sg/handle/10635/70340 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	2005 International Semiconductor Device Research Symposium
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Low, T. Feng, Y.P. Li, M.F. Samudra, G. Yeo, Y.C. Bai, P. Chan, L. Kwong, D.L.
format	Conference or Workshop Item
author	Low, T. Feng, Y.P. Li, M.F. Samudra, G. Yeo, Y.C. Bai, P. Chan, L. Kwong, D.L.
spellingShingle	Low, T. Feng, Y.P. Li, M.F. Samudra, G. Yeo, Y.C. Bai, P. Chan, L. Kwong, D.L. First principle study of Si and Ge band structure for UTB MOSFETs applications
author_sort	Low, T.
title	First principle study of Si and Ge band structure for UTB MOSFETs applications
title_short	First principle study of Si and Ge band structure for UTB MOSFETs applications
title_full	First principle study of Si and Ge band structure for UTB MOSFETs applications
title_fullStr	First principle study of Si and Ge band structure for UTB MOSFETs applications
title_full_unstemmed	First principle study of Si and Ge band structure for UTB MOSFETs applications
title_sort	first principle study of si and ge band structure for utb mosfets applications
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/70340
_version_	1821207282779684864

First principle study of Si and Ge band structure for UTB MOSFETs applications

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