Graphene nanoribbon tunneling field-effect transistors with a semiconducting and a semimetallic heterojunction channel

10.1109/TED.2012.2186577

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Bibliographic Details
Main Authors: Da, H., Lam, K.-T., Samudra, G., Chin, S.-K., Liang, G.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82425
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Institution: National University of Singapore
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Summary:10.1109/TED.2012.2186577